- patented trench schottky technology - excellent high temperature stability - low forward voltage - low power loss/ high efficiency - high forward surge capability packing code with suffix "g" means green compound (halogen-free) terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test symbol unit v rrm v dv/dt v/ s i f = 15a t j = 25c i f = 15a t j = 125c t j = 25c a t j = 125c ma r jc c/w t j c t stg c document number: ds_d1501011 to-220ab TST30U60C 250 taiwan semiconductor a i f(av) per device features peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode case: to-220ab mechanical data - halogen-free according to iec 61249-2-21 definition maximum repetitive peak reverse voltage 30a, 60v trench schottky rectifier TST30U60C 60 - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec typical applications trench schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board dc/dc converters. molding compound meets ul 94 v-0 flammability rating maximum ratings and electrical characteristics (t a =25c unless otherwise noted) per diode 30 i fsm 15 maximum average forward rectified current parameter polarity: as marked mounting torque: 0.56 nm max. - min. typ. max. a v weight: 1.88 g (approximately) 0.57 instantaneous forward voltage per diode (note1) 0.48 voltage rate of change (rated v r ) 10000 -0.43 v f 0.52 4 version: b15 --60 note 1: pulse test with pulse width=300 s, 1% duty cycle instantaneous reverse current per diode at rated reverse voltage i r typical thermal resistance per diode operating junction temperature range - 55 to +150 storage temperature range - 55 to +150 - - 500
(t a =25 o c unless otherwise noted) document number: ds_d1501011 order information (example) ratings and characteristics curves version: b15 TST30U60C taiwan semiconductor 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 t j =25 o c t j =100 o c t j =125 o c t j =150 o c 100 1000 10000 0 1 10 100 f=1.0mhz v sig =50mv p-p 0.01 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 fig. 2 typical forward characteristics t j =150 o c t j =125 o c t j =100 o c t j =25 o c 0 10 20 30 40 0 25 50 75 100 125 150 fig.1 forward current derating curve with heatsink 3in x 5in x 0.25in al-plate average forward current (a) instantaneous forward current (a) capacitance (pf) instantaneous reverse c urrent (ma) fig. 4 typical junction capacitance fig. 3 typical reverse characteristics case temperature ( o c) forward voltage (v) reverse voltage (v) percent of rated peak reverse voltage (%) TST30U60C c0g green compound ? code packing ? code part ? no.
package outline dimensions min max min max a 9.60 10.50 0.378 0.413 b 2.62 3.44 0.103 0.135 c 2.80 4.20 0.110 0.165 d 0.68 0.94 0.027 0.037 e 3.54 4.00 0.139 0.157 f 14.60 16.00 0.575 0.630 g 13.19 14.79 0.519 0.582 h 2.41 2.67 0.095 0.105 i 4.42 4.76 0.174 0.187 j 1.14 1.40 0.045 0.055 k 5.84 6.86 0.230 0.270 l 2.20 2.80 0.087 0.110 m 0.35 0.64 0.014 0.025 p/n = specific device code g =green compound yww = date code f = factory code document number: ds_d1501011 marking diagram version: b15 TST30U60C taiwan semiconductor to-220ab dim. unit (mm) unit (inch)
creat by art assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1501011 TST30U60C taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, version: b15
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